METHOD FOR PRODUCING SOI WAFER

摘要

Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and this silicon wafer for active layer is bonded with a supporting wafer via the insulating film. The bonded wafer is heated at 500˚C, so that a part of the bonded wafer is separated therefrom, thereby producing an SOI wafer. The thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. Then, the SOI wafer is subjected to an oxidation treatment in an oxidizing atmosphere, and the oxide film is removed using an HF liquid. Consequently, the surface of the SOI wafer is recrystallized and therefore planarized.