发明名称 |
Verfahren zum Herstellen von Halbleitervorrichtungen unter Verwendung von Trockenätzen |
摘要 |
A manufacturing method of semiconductor devices adaptable for use in microelectronics devices such as angular-rate sensors includes the steps of preparing a silicon wafer having a lamination of a p-type silicon substrate and an n-type epitaxial layer as formed thereon, defining on a specified surface of the wafer a plurality of recess portions each having a reduced-thickness portion on the opposite surface side which consists of the epitaxial layer, forming plural through-going holes in each reduced-thickness portion by causing a gel- or oil-like coolant medium made of a thermally conductive material to be disposed in contact with one surface of the reduced-thickness portion of the silicon substrate and by effecting dry etching of certain region from the other surface of the reduced-thickness portion, and thereafter removing the medium. This medium serves to absorb and dissipate heat generated at the reduced-thickness portion during the dry etching. |
申请公布号 |
DE19715194(B4) |
申请公布日期 |
2005.03.17 |
申请号 |
DE1997115194 |
申请日期 |
1997.04.11 |
申请人 |
DENSO CORP., KARIYA;NIPPON SOKEN, INC. |
发明人 |
MATSUHIRO, YASUSHI;ASAMI, KAZUSHI;YOSHINO, YOSHIMI |
分类号 |
B81C1/00;C23F4/00;G01C19/56;G01C19/5621;G01C19/5628;H01L21/302;H01L21/3065;H01L21/311;H01L41/08;H01L41/22;H01L49/00 |
主分类号 |
B81C1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|