| 摘要 |
<p>A HEMT comprises a silicon substrate (1), a buffer region (2) composed of a nitride semiconductor, a nitride semiconductor region (3), a source electrode (4), a drain electrode (5), a gate electrode (6), an insulating film (7), a conductive film (8) and a contact electrode (9). The buffer region (2) is composed of first layers (13) of AlN and second layers (14) of GaN, which first and second layers are repeatedly grown on the silicon substrate (1). The semiconductor region (3) comprises an electron transport layer (15) and an electron supply layer (16). The side surfaces (17) of the buffer region (2) and the semiconductor region (3) are sloped, and the conductive film (8) is arranged opposite to the sloped side surface (17) via the insulating film (7). The conductive film (8) is connected to the silicon substrate (1) via the contact electrode (9) and contributes to reduce leakage current in the side surface (17).</p> |
