| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrooptical device capable of improving the light shielding performance of a semiconductor layer of thin film transistors to suppress the generation of light leakage current, thereby displaying high quality images without flicker or the like. <P>SOLUTION: The electrooptical device includes, above a substrate, data lines (6a) that are a built-in light shielding film, scanning lines (11a), TFTs having a semiconductor layer (1a) to which scanning signals are supplied by the scanning lines, pixel electrodes (9a) to which image signals are supplied by the data lines through the TFTs, storage capacitors (70) arranged below the data lines, and an insulating film (42) covering the storage capacitors. The data lines are formed to avoid stepped portions (42DR and 42DL) on the surface of the insulating film caused by the height of the storage capacitors. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
