发明名称 SINGLE-SIDED MIRROR PLANE WAFER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a single-sided mirror plane wafer which can reduce the occurrence of particles, can eliminate the contamination by heavy metals and deterioration of surrounding environment, and allows the efficient and stable formation of a distorted layer; and also to provide its manufacturing method. SOLUTION: The rear face of a silicon wafer W is polished by green-color silicon carbide (a) to form the distorted layer Wa. Consequently, compared with the conventional method using a suspension containing loose abrasive grains, an attachment amount of polishing abrasive grains to the wafer W can be reduced, resulting in reducing the occurrence of particles on the surface of the wafer and eventually reducing the frequency of occurrence of inferior goods in a wafer manufacturing process and in a device process. Furthermore, heavy metal contamination by the suspension and the deterioration of surrounding environment by mist of the suspension can be eliminated, and the distorted layer Wa can be formed efficiently and stably. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005072150(A) 申请公布日期 2005.03.17
申请号 JP20030297787 申请日期 2003.08.21
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 HIROSHIGE TAKESHI;OKAWA SHINJI;MURAYAMA KATSUHIKO
分类号 B24B21/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B21/00
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