发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM WITH SURFACE WAVE, AND SEMICONDUCTOR THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor thin film using surface waves, which is simple and can reduce the cost and control crystal grain boundary, and to provide a semiconductor thin film. SOLUTION: Preliminary wave motion is generated on a semiconductor thin film surface on a substrate. In this state, spatially periodical crystal grain boundary is formed broadly and stably on the semiconductor thin film surface by the irradiation of a linearly polarized laser beam. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005072165(A) 申请公布日期 2005.03.17
申请号 JP20030298220 申请日期 2003.08.22
申请人 JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 HOTTA SUSUMU;KAKI HIROKAZU;OTANI TAKEHIKO
分类号 H01L21/20;H01L21/268;(IPC1-7):H01L21/20 主分类号 H01L21/20
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