发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM WITH SURFACE WAVE, AND SEMICONDUCTOR THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor thin film using surface waves, which is simple and can reduce the cost and control crystal grain boundary, and to provide a semiconductor thin film. SOLUTION: Preliminary wave motion is generated on a semiconductor thin film surface on a substrate. In this state, spatially periodical crystal grain boundary is formed broadly and stably on the semiconductor thin film surface by the irradiation of a linearly polarized laser beam. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005072165(A) |
申请公布日期 |
2005.03.17 |
申请号 |
JP20030298220 |
申请日期 |
2003.08.22 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
HOTTA SUSUMU;KAKI HIROKAZU;OTANI TAKEHIKO |
分类号 |
H01L21/20;H01L21/268;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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