发明名称 APPARATUS FOR GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for growing a single crystal, with which the temperature gradient of a crystal growth part can be controlled to be constant over late stage from initial stage, the crystal growth speed can be preferably controlled, and a large size and long single crystal can be manufactured stably. SOLUTION: This apparatus for growing the single crystal is equipped with a crucible 5 for accommodating a raw material, an induction coil 6 arranged at the outside of the crucible 5, a pulling rod 8 to whose tip end a seed crystal is arranged and which is capable of being moved in the up-and-down direction in such a state that it can rotate in the crucible 5, a furnace wall 1 which is arranged so as to surround the crucible 5 and the pulling rod 8, and an auxiliary heating element 11 disposed on the outside face of the crucible 5. It is possible to unify the temperature gradient of the crucible 5 from initial stage to final stage of the crystal growth by using the auxiliary heating element 11. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005067989(A) 申请公布日期 2005.03.17
申请号 JP20030303754 申请日期 2003.08.27
申请人 KYOCERA CORP 发明人 KIYOHARA TOSHIFUMI
分类号 C30B15/14;(IPC1-7):C30B15/14 主分类号 C30B15/14
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