发明名称 Nonvolatile semiconductor memory cell matrix, a mehtod for operating the same, monolithic integrated circuits and systems
摘要 A nonvolatile semiconductor memory includes a plurality of word lines WL; a plurality of bit lines BL; memory cell transistors having a charge storage layer arranged in the column whose charge storage state is controlled by one of the word lines; memory cell transistor rows MSGm, MSGn functioning as select gate lines by injecting a charge into the charge storage layer of a memory cell transistor to form an enhancement mode transistor. Any one of a first select gate transistor or a second transistor, or both may be formed by a memory cell transistor functioning as a select gate transistor.
申请公布号 US2005056869(A1) 申请公布日期 2005.03.17
申请号 US20040903015 申请日期 2004.08.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ICHIGE MASAYUKI;ARAI FUMITAKA;SUGIMAE KIKUKO
分类号 G11C16/06;G11C11/00;G11C16/02;G11C16/04;G11C16/08;G11C16/10;G11C16/16;H01L21/8246;H01L21/8247;H01L27/00;H01L27/10;H01L27/115;H01L29/74;H01L29/788;H01L29/792;(IPC1-7):H01L29/74 主分类号 G11C16/06
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