发明名称 |
Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
摘要 |
Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group Ill nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
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申请公布号 |
US2005056824(A1) |
申请公布日期 |
2005.03.17 |
申请号 |
US20040899791 |
申请日期 |
2004.07.27 |
申请人 |
BERGMANN MICHAEL JOHN;EMERSON DAVID TODD |
发明人 |
BERGMANN MICHAEL JOHN;EMERSON DAVID TODD |
分类号 |
H01L33/06;H01L33/32;(IPC1-7):H01L21/00;H01L29/18 |
主分类号 |
H01L33/06 |
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