发明名称 MEMORIES AND MEMORY CIRCUITS
摘要 Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). One of the MRAMs is a switchable MRAM (60), the other MRAM is a reference MRAM (62) arranged to provide a reference by which the changed states of the switchable MRAM (60) may be readily observed and measured in the form of a differential.
申请公布号 WO03096351(A3) 申请公布日期 2005.03.17
申请号 WO2003IB01748 申请日期 2003.04.29
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;VAN DER ZAAG, PIETER, J.;EDWARDS, MARTIN, J.;LENSSEN, KARS-MICHIEL, H. 发明人 VAN DER ZAAG, PIETER, J.;EDWARDS, MARTIN, J.;LENSSEN, KARS-MICHIEL, H.
分类号 G02F1/1333;G02F1/1362;G11C11/15;G11C11/16;G11C11/411;H01L21/8246;H01L27/105;H01L43/08 主分类号 G02F1/1333
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