发明名称 ISOSTATIC PRESSURE ASSISTED WAFER BONDING METHOD
摘要 In the invention, wafers are initially weakly bonded. The weak bond is sufficient to impede penetration of an isostatic pressure transmitting media, e.g., a gas or liquid, into any region between the wafers. The weak bond also permits handling. Weak bonds are strengthened, or new bonds formed, by heating and pressing together the weakly bonded wafers by application of isostatic pressure. By the invention, weak interfacial bonds may be strengthened.
申请公布号 WO2004036626(A3) 申请公布日期 2005.03.17
申请号 WO2003US33132 申请日期 2003.10.17
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;NESTERENKO, VITALI;RUDEE, MERVYN, L.;MAGES, PHILLIP;GU, YABEI 发明人 NESTERENKO, VITALI;RUDEE, MERVYN, L.;MAGES, PHILLIP;GU, YABEI
分类号 B23K20/02 主分类号 B23K20/02
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