发明名称 METHOD OF CREATING A HIGH PERFORMANCE ORGANIC SEMICONDUCTOR DEVICE
摘要 A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. A laser is adapted to heat a localized area (164) of an organic semiconductor device. Laser (160) emits an electromagnetic radiation beam (162) at the localized portion of an organic semiconductor device (10).
申请公布号 KR20050026844(A) 申请公布日期 2005.03.16
申请号 KR20037015980 申请日期 2003.12.05
申请人 PRECISION DYNAMICS CORPORATION 发明人 BEIGEL, MICHAEL, L.;MA, LIPING;YANG, YANG
分类号 H01L21/28;H01L21/00;H01L21/02;H01L21/336;H01L21/44;H01L29/26;H01L29/786;H01L33/00;H01L35/24;H01L51/00;H01L51/05;H01L51/30;H01L51/40;H01L51/52 主分类号 H01L21/28
代理机构 代理人
主权项
地址