发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
The following process control is performed in the case of fabricating both a wafer for a device including a Ge-containing semiconductor film and a wafer for a SiCMOS device, for example, including no Ge-containing semiconductor film on a common fabrication line. When the wafer including the Ge-containing semiconductor film is to be subjected to high-temperature treatment at 700 DEG C or more in the state of the Ge-containing semiconductor film being substantially exposed, the Ge-containing semiconductor film is covered with a cap layer made of Si or the like before the high-temperature treatment. The cap layer may be formed on the common fabrication line, but, if the formation of the cap layer itself involves high temperature of 700 DEG C or more, it is performed on a fabrication line separate from the common fabrication line. Alternatively, the cap layer may be formed on a fabrication line separate from the common fabrication line and the high-temperature treatment at 700 DEG C or more may also be performed on a separate fabrication line. Otherwise, it is enough to only perform the high-temperature treatment at 700 DEG C or more on a separate line. <IMAGE> |
申请公布号 |
EP1143502(A4) |
申请公布日期 |
2005.03.16 |
申请号 |
EP19990943289 |
申请日期 |
1999.09.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUGAHARA, GAKU;SAITOH, TOHRU;KUBO, MINORU;OHNISHI, TERUHITO |
分类号 |
H01L21/20;H01L21/285;H01L21/314;H01L21/316;H01L21/318;H01L21/331;H01L21/337;H01L21/8238 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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