发明名称 ADAPTIVELY PLASMA SOURCE FOR GENERATING UNIFORM PLASMA
摘要 An adaptive plasma source for uniformly generating plasma is provided to improve uniformity of plasma density by arranging unit coils in spiral around a bushing. A plasma reaction chamber(200) has an inner space(204) defined by a chamber outer wall(202). A semiconductor wafer(206) is positioned on a lower portion of the inner space(204) in the plasma reaction chamber(200). The semiconductor wafer(206) is provided on a supporter(208) of the lower portion of the plasma reaction chamber(200). The supporter(208) is connected to an RF(Radio Frequency) power source that is located at outside of the plasma reaction chamber(200). A dome(212) is provided on an upper portion of the plasma reaction chamber(200). A plasma(214) is generated in a space between the dome(212) and the semiconductor wafer(206).
申请公布号 KR20050026679(A) 申请公布日期 2005.03.15
申请号 KR20030063416 申请日期 2003.09.09
申请人 ADAPTIVE PLASMA TECHNOLOGY CORPORATION 发明人 KIM, NAM HUN
分类号 H01J37/32;H05H1/46;(IPC1-7):H05H1/46 主分类号 H01J37/32
代理机构 代理人
主权项
地址