发明名称 |
ADAPTIVELY PLASMA SOURCE FOR GENERATING UNIFORM PLASMA |
摘要 |
An adaptive plasma source for uniformly generating plasma is provided to improve uniformity of plasma density by arranging unit coils in spiral around a bushing. A plasma reaction chamber(200) has an inner space(204) defined by a chamber outer wall(202). A semiconductor wafer(206) is positioned on a lower portion of the inner space(204) in the plasma reaction chamber(200). The semiconductor wafer(206) is provided on a supporter(208) of the lower portion of the plasma reaction chamber(200). The supporter(208) is connected to an RF(Radio Frequency) power source that is located at outside of the plasma reaction chamber(200). A dome(212) is provided on an upper portion of the plasma reaction chamber(200). A plasma(214) is generated in a space between the dome(212) and the semiconductor wafer(206).
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申请公布号 |
KR20050026679(A) |
申请公布日期 |
2005.03.15 |
申请号 |
KR20030063416 |
申请日期 |
2003.09.09 |
申请人 |
ADAPTIVE PLASMA TECHNOLOGY CORPORATION |
发明人 |
KIM, NAM HUN |
分类号 |
H01J37/32;H05H1/46;(IPC1-7):H05H1/46 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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