DEVICE AND METHOD FOR THERMALLY TREATING SEMICONDUCTOR WAFERS

摘要

A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent tungsten evaporating from said substrate from becoming deposited on the transparent wall part of the treatment chamber.