发明名称 |
Magnetic sensing element with ESD resistance improved by adjusting the lengths of antiferromagnetic layers and free layer in the height direction |
摘要 |
A magnetic sensing element having a reduced electrical resistance and a large exchange anisotropic magnetic field between a free layer and antiferromagnetic layers for exchange biasing is provided. The magnetic sensing element includes second antiferromagnetic layers and a free magnetic layer, and the length of the second antiferromagnetic layers in a height direction in side regions disposed at the lateral sides of a track width region is larger than the length of the free magnetic layer in the height direction in the track width region.
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申请公布号 |
US6867952(B2) |
申请公布日期 |
2005.03.15 |
申请号 |
US20030345881 |
申请日期 |
2003.01.16 |
申请人 |
ALPS ELECTRIC CO., LTD. |
发明人 |
HASEGAWA NAOYA |
分类号 |
G01R33/09;G11B5/00;G11B5/31;G11B5/39;H01L43/08;H01L43/12;(IPC1-7):G11B5/39 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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