发明名称 Semiconductor integrated circuit device and its manufacturing method
摘要 A semiconductor wafer which has finished formation of a relocating wiring layer thereon is stored and after determination of a design, solder bumps are formed over bump lands (one end of the relocating wiring layer) in accordance with a pattern which differs with a design, whereby a function or characteristic depending on the design is selected. The semiconductor wafer is then cut into a plurality of semiconductor chips, whereby a wafer level CSP is available.
申请公布号 US6867123(B2) 申请公布日期 2005.03.15
申请号 US20030250939 申请日期 2003.07.09
申请人 RENESAS TECHNOLOGY CORP. 发明人 KATAGIRI MITSUAKI;SHIRAI YUJI;NISHI KUNIHIKO;OHNISHI TAKEHIRO
分类号 H01L23/31;H01L23/485;H01L23/525;H01L27/02;H01L27/105;(IPC1-7):H01L21/44 主分类号 H01L23/31
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