发明名称 |
Monitoring method, exposure method, a manufacturing method for a semiconductor device, including an etching method and exposure processing unit |
摘要 |
A monitoring method, includes: delineating a monitor resist pattern on an underlying film, the monitor resist pattern having a tilted sidewall slanted to a surface of the underlying film at least at one edge of the monitor resist pattern; measuring a width of the monitor resist pattern in an orthogonal direction to a cross line of the tilted sidewall intersecting with the underlying film; delineating a monitor underlying film pattern by selectively etching the underlying film using the monitor resist pattern as a mask; measuring a width of the monitor underlying film pattern in the orthogonal direction; and obtaining a shift width in the monitor underlying film pattern from a difference between the width of the monitor resist pattern and the width of the monitor underlying film pattern.
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申请公布号 |
US6866976(B2) |
申请公布日期 |
2005.03.15 |
申请号 |
US20030394047 |
申请日期 |
2003.03.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ASANO MASAFUMI;KOMINE NOBUHIRO;INOUE SOICHI |
分类号 |
G01B11/02;G03F7/20;G03F7/207;G03F7/22;G03F9/00;H01L21/02;H01L21/027;H01L21/3065;H01L21/66;(IPC1-7):G03F9/00 |
主分类号 |
G01B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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