发明名称 |
Half voltage generator for use in semiconductor memory device |
摘要 |
A voltage generator for use in a semiconductor memory device provides a stabilized output voltage of half a supply voltage Vcc. The voltage generator includes a reference voltage generator capable of generating first and second reference voltages. A differential amplification drive circuit is capable of generating an output voltage responsive to the first and second reference voltages. A resistance/diode reference voltage generator is capable of generating third and fourth reference voltages. And a pull-up/down drive is capable of changing the output voltage responsive to the third and fourth reference voltages. The resulting voltage generator provides a stable and accurate output voltage that is resistant to output load variations.
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申请公布号 |
US6867639(B2) |
申请公布日期 |
2005.03.15 |
申请号 |
US20030648603 |
申请日期 |
2003.08.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUN KI-CHUL |
分类号 |
G11C5/14;(IPC1-7):G05F1/10 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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地址 |
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