发明名称 Half voltage generator for use in semiconductor memory device
摘要 A voltage generator for use in a semiconductor memory device provides a stabilized output voltage of half a supply voltage Vcc. The voltage generator includes a reference voltage generator capable of generating first and second reference voltages. A differential amplification drive circuit is capable of generating an output voltage responsive to the first and second reference voltages. A resistance/diode reference voltage generator is capable of generating third and fourth reference voltages. And a pull-up/down drive is capable of changing the output voltage responsive to the third and fourth reference voltages. The resulting voltage generator provides a stable and accurate output voltage that is resistant to output load variations.
申请公布号 US6867639(B2) 申请公布日期 2005.03.15
申请号 US20030648603 申请日期 2003.08.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUN KI-CHUL
分类号 G11C5/14;(IPC1-7):G05F1/10 主分类号 G11C5/14
代理机构 代理人
主权项
地址
您可能感兴趣的专利