发明名称 Semiconductor pressure sensor
摘要 In a diaphragm (30) having a square shape comprising four sides of a pair of first sides (31, 32) extending along the <110> crystal axis direction and a pair of second sides (33, 34) extending along the <100> crystal axis direction, when an axis bisecting each of the first sides (31, 32) of the diaphragm (30) and passing through the center point of the diaphragm is set as a first axis K1 and an axis vertically-intersecting to the first axis K1 and passing through the center point of the diaphragm is set as a second axis K2, each of the side gages Rs1, Rs2 is located on a virtual line T1, T2, T3, T4 which extends from the center point of each of the center gages Rc1, Rc2 to the peripheral portion of the diaphragm (30) and intersects to the first axis K1 and the second axis K2 at 45°.
申请公布号 US6865951(B2) 申请公布日期 2005.03.15
申请号 US20040791890 申请日期 2004.03.04
申请人 DENSO CORPORATION 发明人 KATSUMATA TAKASHI;TOYODA INAO;TANAKA HIROAKI
分类号 B81B3/00;G01L9/00;G01L9/04;G01L9/16;H01L29/84;(IPC1-7):G01L9/16 主分类号 B81B3/00
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