发明名称 |
Strained silicon NMOS having silicon source/drain extensions and method for its fabrication |
摘要 |
An n-type strained silicon MOSFET utilizes a strained silicon channel region formed on a silicon germanium substrate. Silicon regions are provided in the silicon geranium layer at opposing sides of the strained silicon channel region, and shallow source and drain extensions are implanted in the silicon regions. By forming the shallow source and drain extensions in silicon regions rather than in silicon germanium, source and drain extension distortions caused by the enhanced diffusion rate of arsenic in silicon germanium are avoided.
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申请公布号 |
US6867428(B1) |
申请公布日期 |
2005.03.15 |
申请号 |
US20020282712 |
申请日期 |
2002.10.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER PAUL R.;PATON ERIC N.;XIANG QI |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/06;H01L31/072;H01L31/109;H01L31/032;H01L31/033 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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