发明名称 Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications
摘要 A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.
申请公布号 US6867442(B2) 申请公布日期 2005.03.15
申请号 US20030425460 申请日期 2003.04.29
申请人 INFINEON TECHNOLOGIES AG 发明人 HALIK MARCUS;SCHMID GUENTER;STEFFEN KATJA;KLAUK HAGEN
分类号 H01L29/12;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L23/58 主分类号 H01L29/12
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