发明名称 Semiconductor integrated circuit device including a substrate bias controller and a current limiting circuit
摘要 In a semiconductor integrated circuit device, for realizing high speed, as well as superior product yield rate and usability, while reducing circuit scale and improving on product yield rate and reliability thereof, a main circuit, constructed with CMOS elements, is coupled to a speed monitor circuit for forming a speed signal corresponding to an operating speed thereof and to a substrate bias controller for supplying corresponding substrate bias voltages to the main circuit in response to the speed monitor circuit. A current limiting circuit is also provided in conjunction with the substrate bias controller to prevent an overflow of current due to bias voltage.
申请公布号 US6867637(B2) 申请公布日期 2005.03.15
申请号 US20040889141 申请日期 2004.07.13
申请人 RENESAS TECHNOLOGY CORP. 发明人 MIYAZAKI MASAYUKI;ISHIBASHI KOICHIRO;ONO GOICHI
分类号 H01L27/04;G05F3/20;G11C11/34;G11C11/408;H01L21/822;H01L21/8238;H01L27/092;H03K5/135;H03K19/094;H03M1/66;(IPC1-7):H03K3/01 主分类号 H01L27/04
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