发明名称 |
Vertical double diffused MOSFET and method of fabricating the same |
摘要 |
In a DMOS device, a drift region is located over a substrate and is lightly doped with impurities of a first conductivity type. A plurality of body areas are located in the drift region and doped with impurities of a second conductivity type which is opposite the first conductivity type. A plurality of source areas are respectively located in the body areas and heavily doped with impurities of the first conductivity type. A plurality of bulk areas are respectively located adjacent the source areas and in the body areas, and are heavily doped with impurities of the second conductivity type. A well region partially surrounds the body areas collectively and is doped with impurities of the first conductivity.
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申请公布号 |
US6867476(B2) |
申请公布日期 |
2005.03.15 |
申请号 |
US20030396348 |
申请日期 |
2003.03.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE SUN-HAK |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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