发明名称 Semiconductor die package processable at the wafer level
摘要 A method for forming a semiconductor die package is provided. The method comprises: forming a semiconductor die including a source contact region and a gate contact region at a first side and a drain contact region at a second side; forming a first conductive path on the semiconductor die extending from the source contact region at the first side to the second side; forming a second conductive path on the semiconductor die extending from the gate contact region at the first side to the second side; and attaching the semiconductor die to a circuit substrate so that the second side is proximate to the circuit substrate and the first side is distal to circuit substrate.
申请公布号 US6867489(B1) 申请公布日期 2005.03.15
申请号 US20030349131 申请日期 2003.01.21
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 ESTACIO MARIA CRISTINA B.
分类号 H01L23/31;H01L23/485;H01L29/06;(IPC1-7):H01L23/48 主分类号 H01L23/31
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