发明名称 |
Semiconductor die package processable at the wafer level |
摘要 |
A method for forming a semiconductor die package is provided. The method comprises: forming a semiconductor die including a source contact region and a gate contact region at a first side and a drain contact region at a second side; forming a first conductive path on the semiconductor die extending from the source contact region at the first side to the second side; forming a second conductive path on the semiconductor die extending from the gate contact region at the first side to the second side; and attaching the semiconductor die to a circuit substrate so that the second side is proximate to the circuit substrate and the first side is distal to circuit substrate.
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申请公布号 |
US6867489(B1) |
申请公布日期 |
2005.03.15 |
申请号 |
US20030349131 |
申请日期 |
2003.01.21 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
ESTACIO MARIA CRISTINA B. |
分类号 |
H01L23/31;H01L23/485;H01L29/06;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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