| 发明名称 |
Isotopically pure silicon-on-insulator wafers and method of making same |
| 摘要 |
The present invention provides improved semiconductor wafer structures having isotopically-enriched layers and methods of making the same.
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| 申请公布号 |
US6867459(B2) |
申请公布日期 |
2005.03.15 |
| 申请号 |
US20020189732 |
申请日期 |
2002.07.03 |
| 申请人 |
ISONICS CORPORATION |
发明人 |
BURDEN STEPHEN J. |
| 分类号 |
C30B19/00;C30B23/02;C30B25/02;H01L21/20;H01L21/762;H01L29/16;H01L29/20;H01L33/64;(IPC1-7):H01L27/01 |
主分类号 |
C30B19/00 |
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