发明名称 Method of wafer edge damage inspection
摘要 A source of ultrasound waves or energy is directed at the wafer that is to be inspected in a direction that is essentially perpendicular with the surface of the wafer. The ultrasonic waves are intercepted and analyzed after these waves have passed through the wafer that is being inspected. From this analysis and comparing the captured waves or ultrasonic energy with the emitted ultrasonic waves, conclusions can be drawn on defects and other irregularities that are present in the medium, that is the wafer, through which the ultrasonic waves have passed.
申请公布号 US6865948(B1) 申请公布日期 2005.03.15
申请号 US20020059835 申请日期 2002.01.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 CHEN SHENG-HSIUNG
分类号 G01N21/95;G01N29/07;G01N29/11;G01N29/265;G01N29/44;(IPC1-7):G01N29/08;G01N21/88 主分类号 G01N21/95
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