发明名称 |
Memory device with reduced operating voltage having dielectric stack |
摘要 |
A non-volatile memory device includes a semiconductor substrate and a pair of buried bitlines within the substrate. A scaled down dielectric stack is formed over the substrate. The scaled down dielectric stack includes a scaled down top dielectric layer, a scaled down charge trapping dielectric layer and a bottom dielectric layer. A wordline is formed over the dielectric stack. The memory device is operative to be programmed using a reduced wordline operating voltage of less than about +8 Volts, and to be erased using a reduced wordline operating voltage of less than about -6 Volts.
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申请公布号 |
US6868014(B1) |
申请公布日期 |
2005.03.15 |
申请号 |
US20030430604 |
申请日期 |
2003.05.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MELIK-MARTIROSIAN ASHOT;RANDOLPH MARK W.;HADDAD SAMEER S. |
分类号 |
G11C16/04;H01L21/28;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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