发明名称 Method of polishing a multi-layer substrate
摘要 The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
申请公布号 US6867140(B2) 申请公布日期 2005.03.15
申请号 US20030353512 申请日期 2003.01.29
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 WANG SHUMIN;KAUFMAN VLASTA BRUSIC;GRUMBINE STEVEN K.;CHERIAN ISAAC K.
分类号 C09G1/02;H01L21/321;(IPC1-7):H01L21/302 主分类号 C09G1/02
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