发明名称 Method of forming a thin film
摘要 The vacuum degree in a reactor is set to as low as 0.1 Torr. In this state, a butyl acetate solution in which Pb(DPM)2 is dissolved at a concentration of 0.1 mol is transported from a Pb source generator to an evaporator, while the flow rate of the butyl acetate solution is controlled to a predetermined flow rate by a massflow controller, to evaporate the Pb(DPM)2 dissolved together with the butyl acetate by the evaporator. Helium gas is added to these at a flow rate of 250 sccm, and the mixed gas is transported to a shower head. With this operation, source gases are supplied to a wafer in the reactor, while the partial pressure of each source gas is set low.
申请公布号 US6866882(B1) 申请公布日期 2005.03.15
申请号 US20000657627 申请日期 2000.09.08
申请人 TOKYO ELECTRON LIMITED 发明人 SHINRIKI HIROSHI;MATSUMOTO KENJI
分类号 H01L21/8247;C23C16/02;C23C16/40;C23C16/448;H01L21/00;H01L21/31;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H01L29/788;H01L29/792;(IPC1-7):B05D5/12 主分类号 H01L21/8247
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