METHOD OF MANUFACTURING TRANSISTOR HAVING RECESSED CHANNEL

摘要

A method of manufacturing a transistor is provided to prevent short channel effect by using an enhanced recess channel. A plurality of trenches(110) for a recess channel are formed on a semiconductor substrate(100). An isolation layer is formed in the substrate. A gate dielectric film(310) is formed along an upper surface of the resultant structure. A gate(330) for filling completely the trench is formed on the gate dielectric film. A source and drain region are formed in the substrate to align the gate.