| 摘要 |
An outer layer (3) is provided for process surfaces (2), inclined or vertical to the substrate surface (101), on a relief structured substrate surface (101) of a substrate (1), typically a semiconductor wafer, by means of a deposition method (atomic layer deposition, ADL), which is already structured in a simple manner in the vertical direction relative to the substrate surface (101) and embodied as a functional layer or mask for subsequent process steps, by means of defining a process amount of at least one precursor material and/or by time limitation of the deposition method. |
