A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a fabricating method thereof are provided to reduce largely total size thereof by miniaturizing a non-volatile memory. A plurality of non-volatile memory cells include a plurality of first electrodes(4G) installed on a semiconductor substrate(1S), a plurality of second electrodes(5) formed on the semiconductor substrate in order to cross with the first electrodes, and a plurality of third electrodes(6G) for electric charge accumulation installed at positions which respectively lie between the adjacent first electrodes and overlap with the second electrodes in plan view. The third electrodes are installed in a state insulated from the semiconductor substrate, the first electrodes, and the second electrodes between the semiconductor substrate and the second electrodes.