METHOD FOR CHEMICAL MECHANICAL POLISHING

摘要

A chemical mechanical polishing method is provided to detect an end point accurately, and to reduce polishing errors by detecting a real time polishing state without an additional end point detector in spite of passing operation time. A polishing end time is set(S1), and a substrate is polished by rotating an abrasive pad or the substrate while pressing the substrate to the abrasive pad including abrasive fluid under specific pressure. The substrate is polished while increasing an amount of accessory products deposited on the abrasive pad(S2), and the polishing rate is decreased by the accessory products deposited on the abrasive pad(S3). A work piece is polished according to desired value by finishing polishing at polishing end time(S4). The amount of accessory products is controlled by regulating supply or discharge of the abrasive fluid, and polishing end time is set by checking polishing result of plural samples.