发明名称 OH AND H RESISTANT SILICON MATERIAL
摘要 A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical transmission with zero attenuation is provided. There is no intrinsic material absorption.
申请公布号 KR20050025315(A) 申请公布日期 2005.03.14
申请号 KR20057000225 申请日期 2005.01.06
申请人 CTZ INC. 发明人 CURATOLO, SUSANA
分类号 C23C14/24;C30B1/00;C30B1/12;C30B9/00;C30B11/00;F27B5/04;F27B14/04 主分类号 C23C14/24
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