发明名称 SEMICONDUCTOR DEVICE HAVING SOI SUBSTRATE, ELECTRO-OPTICAL APPARATUS AND ELECTRONIC EQUIPMENT HAVING ELEMENT SUBSTRATE, AND METHOD OF MANUFACTURING THE ELECTRO-OPTICAL APPARATUS
摘要 An SOI (Silicon On Insulator) substrate is provided with: a support substrate ( 201 ); a single crystal silicon layer ( 202 ) disposed above one surface of the support substrate; an insulation portion ( 205 ) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film ( 204 ).
申请公布号 KR100475502(B1) 申请公布日期 2005.03.14
申请号 KR20040021340 申请日期 2004.03.29
申请人 发明人
分类号 H01L27/12;H01L21/762;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L27/12 主分类号 H01L27/12
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