发明名称 |
SEMICONDUCTOR DEVICE HAVING SOI SUBSTRATE, ELECTRO-OPTICAL APPARATUS AND ELECTRONIC EQUIPMENT HAVING ELEMENT SUBSTRATE, AND METHOD OF MANUFACTURING THE ELECTRO-OPTICAL APPARATUS |
摘要 |
An SOI (Silicon On Insulator) substrate is provided with: a support substrate ( 201 ); a single crystal silicon layer ( 202 ) disposed above one surface of the support substrate; an insulation portion ( 205 ) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film ( 204 ). |
申请公布号 |
KR100475502(B1) |
申请公布日期 |
2005.03.14 |
申请号 |
KR20040021340 |
申请日期 |
2004.03.29 |
申请人 |
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发明人 |
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分类号 |
H01L27/12;H01L21/762;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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