METHOD OF FORMING MIM CAPACITOR WITHOUT LEAKAGE CURRENT BETWEEN UPPER AND LOWER ELECTRODES

摘要

PURPOSE: A method of forming an MIM(Metal Insulator Metal) capacitor is provided to prevent leakage current between an upper and lower electrode layer by performing sequentially dry etching on a second metal film and an insulating layer. CONSTITUTION: A first metal film(21) with a trench is formed on a semiconductor substrate. An insulating layer(27) and a second metal film(29) are sequentially deposited thereon. An upper electrode, dielectric film and a lower electrode are formed by etching selectively the second metal film, the insulating layer and the first metal film, respectively. At this time, the dielectric film is formed by performing drying etching using activated plasma.