LAYOUT STRUCTURE OF RECESS GATE FOR SECURING MIS-ALIGNMENT MARGIN BETWEEN GATE LINE AND ADJACENT ACTIVE REGION

摘要

PURPOSE: A layout structure of a recess gate is provided to prevent the short circuit due to mis-alignment by forming differently a gap between gate lines arranged on active regions and a gap between gate lines arranged on inactive regions. CONSTITUTION: A layout structure of a recess gate is formed on a semiconductor substrate including active regions(111) and inactive regions. The active regions are periodically arranged in a cell region and are aligned in a diagonal line. A plurality of gate lines(112) are arranged in a Y-axis of each of the active regions. A gap between the gate lines arranged on the active regions is larger than a gap between the gate lines arranged on the inactive regions. The gate lines extends to a Y-axis of each of inactive regions. The gate lines are linearly arranged on the active regions.