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发明名称
Method of forming an isolation layer in a semiconductor device
摘要
申请公布号
KR100474859(B1)
申请公布日期
2005.03.11
申请号
KR20020068052
申请日期
2002.11.05
申请人
发明人
分类号
H01L21/76;H01L21/762;H01L21/8234;H01L21/8242;(IPC1-7):H01L21/76
主分类号
H01L21/76
代理机构
代理人
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地址
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