AlGaInN BASED P-N DIODE AND METHOD FOR FABRICATING THE SAME TO OBTAIN P TYPE AlGaInN WITHOUT POST ACTIVATION ANNEALING USING HYDRAZINE FAMILY SOURCE CAPABLE OF ABSORBING HYDROGEN

摘要

PURPOSE: An AlGaInN based p-n diode and a method for fabricating the same are provided to obtain a p-type AlGaInN only by growing of a thin film without the post activation annealing using a hydrazine family source capable of absorbing hydrogen in the thermal decomposition. CONSTITUTION: A V-family nitrogen precursor includes a hydrazine family source creating a radical capable of combining hydrogen radicals in the thermal decomposition. The hydrogen radicals separated from NH3 is removed, and then a P-Al(x)Ga(y)In(z)N layer is grown.