| 摘要 |
PURPOSE: A method of manufacturing an isolation layer of a semiconductor device is provided to prevent a moat portion from being generated at an upper corner of the isolation layer by polishing a nitride layer using a high selectivity slurry containing a phosphoric acid based compound. CONSTITUTION: A trench is formed in a semiconductor substrate(100) with a pad oxide and nitride layer(110,120). A liner nitride layer(150) is formed on the entire surface of the resultant structure. An oxide layer(160) for filling the trench is formed thereon. The oxide layer is polished as much as desired width by using a low selectivity slurry. The liner nitride layer is exposed to the outside by polishing sequentially the remaining oxide layer using a first high selectivity slurry. The liner nitride layer is then polished by using a second high selectivity slurry containing MxPyOz.
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