| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor capable of forming a flat electrode on an insulating film including metal oxide being high dielectric materials without receiving any influence from the insulating film. SOLUTION: The manufacturing method of a semiconductor comprises a first process to form an insulating film including metal oxide on an Si substrate, a second process to form a first electrode layer constituted of amorphous Si on the insulating film and a third process to form a second electrode layer constituted of multi-crystal Si on the first electrode layer. COPYRIGHT: (C)2005,JPO&NCIPI
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