发明名称 |
METHOD OF FORMING WIRING PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To form a wiring pattern by which a concavo-convex shape is hardly formed on the surface of a substrate forming the wiring pattern, and which has a very flat surface shape. SOLUTION: The method of forming the wiring pattern includes a bank forming step of forming banks B composed of sublimated layers in an area other than a light-irradiated area by partially sublimating a sublimated layer by performing first photoirradiation upon a prescribed in-plane area of a first substrate 1, constituted by laminating a photothermal converting layer containing a photothermal converting material which converts light energy into thermal energy and the sublimated layer containing a sublimating material upon another in this order from the substrate 1 side. The method also includes a conductive layer forming step of disposing a conductive layer 7 between formed banks B, and a transferring step of transferring a conductive pattern layer 70 containing the conductive layer 7 and banks B to a substrate 2 to be treated by facing the conductive pattern layer 70 and substrate 2 to each other and performing second photoirradiation upon the faced substrate 2. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005064249(A) |
申请公布日期 |
2005.03.10 |
申请号 |
JP20030292465 |
申请日期 |
2003.08.12 |
申请人 |
SEIKO EPSON CORP |
发明人 |
TOYODA NAOYUKI |
分类号 |
G02F1/1343;G02F1/13;G02F1/133;G02F1/1362;G03C5/00;H01L21/00;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L29/786;H01L41/09;H05K1/09;H05K3/06;H05K3/12;(IPC1-7):H01L21/320;G02F1/134 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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