| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a leak current which obviously appears when the gate length of a MONOS-type transistor is reduced can be reduced and erroneous deletion (disturbance) can be reduced, and to provide the manufacturing method of the device. SOLUTION: In a non-volatile memory cell including a MONOS-type transistor Q<SB>1</SB>for memory and a MIS-type transistor Q<SB>2</SB>for cell selection, the length B of a charge accumulation film 16 is made shorter than that A of the gate electrode 20 of the MONOS-type transistor Q<SB>1</SB>. The charge accumulation film 16 is prevented from being formed below the end of the gate electrode 20. An oxide film below the end of the gate electrode 20 is made thick. COPYRIGHT: (C)2005,JPO&NCIPI
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