发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device includes: multiple kinds of interlayer insulating films formed on a semiconductor substrate and having different elastic moduli, respectively; a metal pad arranged on said multiple kinds of interlayer insulating films; the interlayer insulating film of a low elastic modulus having the lowest elastic modulus and having an opening located under the metal pad, the interlayer insulating film of a not-low elastic modulus having the elastic modulus larger than the elastic modulus of the interlayer insulating film of the low elastic modulus, being layered in contact with the interlayer insulating film of the low elastic modulus, and continuously extending over the opening and a region surrounding the opening and a metal interconnection layer arranged under the metal pad, filling the opening in the interlayer insulating film of the low elastic modulus, and being in contact with the interlayer insulating film of the not-low elastic modulus.
申请公布号 US2005054188(A1) 申请公布日期 2005.03.10
申请号 US20040933423 申请日期 2004.09.03
申请人 RENESAS TECHNOLOGY CORP.;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MATSUURA MASAZUMI;HORIBE HIROSHI;MATSUMOTO SUSUMU;HAMATANI TSUYOSHI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/44 主分类号 H01L23/52
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