| 摘要 |
PURPOSE: A semiconductor integrated circuit is provided to maintain operational accuracy without restricting a layout of circuit elements installed therein even if properties of temperature-dependent circuit elements change according to temperatures. CONSTITUTION: A power transistor(2) having a multi-layer structure is formed on a semiconductor substrate(1) in order to produce heat of a relatively high temperature. A plurality of temperature-dependent circuit elements(3,4,5,6) having a multi-layer structure is formed in a predetermined location on the semiconductor substrate in order to perform a predetermined operation depending on temperature of the power transistor. Each of the temperature-dependent circuit elements has a constant relationship in temperature-related properties with each another. A plurality of heat conductive layers(7,8) have heat conductivity higher than heat conductivity of the semiconductor substrate. The heat conductive layers are used for covering at least a heat-producing part of the power transistor and the temperature-dependent circuit elements in order to conduct the heat of the power transistor to the temperature-dependent circuit elements. |
