| 摘要 |
PROBLEM TO BE SOLVED: To reduce manufacturing processes of a nonvolatile semiconductor memory device. SOLUTION: A control gate 5 is formed on a field insulating film 2. A floating gate 10 is then formed on the control gate 5 through an insulating film 7. The floating gate 10 is constituted so as to extend from the control gate 5 to on a first gate film 8a. Such structure allows a lower electrode 6 of a capacitor concurrently formed on a Si substrate 1 with the EPROM, and the control gate 5 to be formed, and the floating gate 10 to be concurrently formed with a top electrode 11 of the capacitor. Moreover, a gate oxide film 8b of a MOS transistor concurrently formed on the Si substrate 1 with the EPROM, and a first gate film 8a of EPROM are simultaneously formed. This allows manufacturing processes to be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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