Plasma etching method for etching rear surface of semiconductor wafer, by applying protective tape, discharge power and gradually increasing voltage before introducing gas

摘要

A semiconductor wafer to which protective tape is applied is mounted on a chuck table, a suction force is applied to a suction hole, and the wafer is held via the tape. A small discharge power is supplied from a high-frequency supply to the chuck table and a gas introduction part. A dc voltage is supplied to the chuck table, the voltage being increased gradually, and held at a predetermined voltage. An etching gas is introduced into the processing chamber. An independent claim is included for a plasma etching apparatus.