| 摘要 |
A photo-mask process includes the steps of: spreading a film of photo resist on a carrier (30, 50), exposing the photo resist using a mask with a predefined pattern, developing the photo resist to obtain a photo resist layer (36, 60) with the predefined pattern, depositing a layer of predetermined material on the photo resist layer and the carrier, and removing the photo resist layer and the layer of predetermined material thereon. The photo-mask process can omit a conventional etching process. That is, the photo-mask process is simplified, and its cost is lower than that of conventional photo-mask processes. A related method for manufacturing a thin film transistor is also provided. |
