发明名称 |
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2theta) in CuKalpha X-ray diffraction of 8.4° ± 0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9° ± 0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1) : (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)</p> |
申请公布号 |
WO2005022649(A1) |
申请公布日期 |
2005.03.10 |
申请号 |
WO2004JP12044 |
申请日期 |
2004.08.17 |
申请人 |
CANON KABUSHIKI KAISHA;MIURA, DAISUKE;NAKAYAMA, TOMONARI;OHNISHI, TOSHINOBU;KUBOTA, MAKOTO |
发明人 |
MIURA, DAISUKE;NAKAYAMA, TOMONARI;OHNISHI, TOSHINOBU;KUBOTA, MAKOTO |
分类号 |
H01L51/05;C07D487/22;H01L21/336;H01L29/786;H01L51/30;(IPC1-7):H01L29/786;H01L51/00 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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